GeSe-based ovonic threshold switching volatile true random number generator

Publication Year: 2019 Publication Type : JournalArticle


In this paper, we propose and demonstrate a novel technique for true random number generator (TRNG) application using GeSe-based Ovonic threshold switching (OTS) selector devices. The inherent variability in OTS threshold voltage results in a bimodal distribution of on/off states which can be easily converted into digital bits. The experimental evaluation shows that the proposed TRNG enables the generation of high-quality random bits that passed 12 tests in the National Institute of Standards and Technology statistical test suite without complex external circuits for post-processing. The randomness is further evidenced by the prediction rate of ~50% using machine learning algorithm. Compared with the TRNGs based on non-volatile memories, the volatile nature of OTS avoids the reset operation, thus further simplifying the operation and improving the generation frequency.


@article{chai2019gese, title={GeSe-based ovonic threshold switching volatile true random number generator},
    author={Chai, Zheng and Shao, Wei and Zhang, Weidong and Brown, James and Degraeve, Robin and Salim, Flora D and Clima, Sergiu and Hatem, Firas and Zhang, Jian Fu and Freitas, Pedro and others},
    journal={IEEE Electron Device Letters},


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